Fabrication

The Integrated Clean Room for Micro and Nano fabrication (SBCNM) s a Large Scale Facility (ICTS) dedicated to the development and application of innovative technologies in the field of Nano and Microelectronics.

Since 2014, the ICTS-SBCNM is one of the three nodes of the MICRONANOFABS ICTS Network, the Large Scale Facility supported by the Spanish Ministry of Science and Innovation (MICINN), together with the Clean-Room from ISOM-UPM and the one from NTC-UPV.

The SBCNM is 1500 m2 large, class 100/10000 (ISO 5/7) (plus 4500 m2 for its services), has more than 150 high-tech instruments and is complemented with other 350 m2 of back-end and electrical characterisation laboratories. The SBCNM processing capability is of 2000 wafers per year.

You can use our production services to fully develop and/or fabricate your product or running single processes to test your own technologies and verify their quality.

CONTACT US TO KNOW WHICH IS THE BEST APPROACH TO YOUR GOAL

STANDARD PROCESSES

In the main Clean Room of IMB-CNM are mainly processed silicon wafers of 100 mm, even though other wafers of different materials and sizes can be processed on demand. Processes available are PVD, LPCVD, PECVD, CVD, thermal oxidation, dry etching (RIE, DRIE), photolithography, wet chemical processes, ion implantation, metallization (sputtering, evaporation). You can find more information in the IMB-CNM (CSIC) web page or contacting us.

SPECIAL PROCESSES

  • Shadow Masking Metallization: Selective deposition of thin (up to 10 microns) metal layers (Cu, Al, Ti, Ni, etc.) by evaporation or sputtering, using the shadow-masking technique («dry» process avoiding photolithography). Used, for example, for remetallization of Al pads in power devices, metallization of Al pads in transducers, definition of pads and tracks in ceramic substrates, metallization of piezoelectric substrates, etc.
  • Under Bump Metallization: We offer UBM technology based on electroless Ni/Au coating on Al pads. It is suitable for flip-chip connections with Sn/Ag bumps.

NANOFABRICATION

Techniques available are:

  • Electron Beam Lithography (1-30keV)
  • Thermal Nanoimprint Lithography
  • Focused Ion Beam Nanofabricatin (Ga+ based)

BACK-END PROCESSES

The main activities of this area are addressed towards:

  • Dicing silicon wafer and substrates of different materials using blades dicing with Semiautomatic machines or cleaving with a LatticeAx 420 Cleaving equipment.
  • Packaging of microelectronic devices by means of manual fine wire Wedge Bonder and manual heavy wire Wedge Bonder.

info@dtm.es

+34 935947700 ext. 435527

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Carrer dels Til·lers, UAB Campus, Cerdanyola del Vallès, 08193 Barcelona, Spain

+34 935947700 ext.435527

info@dtm.es

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